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A versatile dry etching device boasting hundreds of successful installations.
● High selection ratio and high-precision etching are possible. ● Automatic operation and process parameter storage are possible with PLC control. ● Samples up to φ8 inches can be accommodated. ● High-speed exhaust etching is possible. ● Compact design.
XeF2 etching device
● Since it is a completely dry process, it is possible to suppress the destruction of self-supporting devices due to stiction. ● No pre-treatment or post-treatment is required in the wet process. ● By intermittently flowing gas and etching, it is easy to control the etching speed and gas usage. ● Since it does not use plasma, there is no damage to the device from electric fields (electron or ion impact). ● Designed for research and development purposes, it is very compact and tabletop in design. ● As it is a dedicated machine, it is low-cost.
ICP etching equipment for compound semiconductor processes
The RIE-330iPC is a multi-wafer processing etching device for compound semiconductor processes that employs an inductively coupled plasma (ICP) discharge method. 【Features】 ○ Compatible with large trays of Φ330mm Up to 27 pieces for Φ2-inch wafers, 17 pieces for Φ2.5-inch wafers, 12 pieces for Φ3-inch wafers, 7 pieces for Φ4-inch wafers, and 3 pieces for Φ6-inch wafers can be processed simultaneously. ○ By adopting the new SSTC (Symmetrical Shielded Tornado Coil) electrode as the ICP source, it enables high selectivity and excellent uniformity in etching over large areas. ○ Allows for low-damage processes at low bias (below -100V). ○ Stable etching conditions can be achieved through temperature control of the substrate stage and the inner walls of the reaction chamber. ○ A turbo molecular pump is also used in the load lock chamber, providing a more stable process.
Introducing a full-scale production device equipped with a vacuum cassette chamber, offering excellent process reproducibility and stability.
The "RIE-800iPC/RIE-400iPC" is an ICP etching device that boasts stability for continuous processing of 25 SiC trench-shaped wafers. It can efficiently and stably apply high RF power (over 2 kW), achieving good uniformity. Additionally, by adopting an exhaust system directly connected to the reaction chamber, it realizes a wide process window from low flow and low pressure to high flow and high pressure. 【Features】 <RIE-800iPC> ■ Supports maximum Φ8” wafers ■ Uses inductively coupled plasma for discharge ■ Equipped with a vacuum cassette chamber, excelling in process reproducibility and stability ■ Optimizes the distance between the wafer and plasma to ensure good in-plane uniformity ■ Integrates TMP (Turbo Molecular Pump) and high-frequency power supply for easy replacement *For more details, please refer to the PDF document or feel free to contact us.
